Ken-ichiro TATSUUMA


A Test Structure for Two-Dimensional Analysis of MOSFETs by Hot-Carrier-Induced Photoemission
Toshihiro MATSUDA Hiroaki TAKEUCHI Akira MURAMATSU Hideyuki IWATA Takashi OHZONE Kyoji YAMASHITA Norio KOIKE Ken-ichiro TATSUUMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/05/01
Vol. E88-C  No. 5  pp. 811-816
Type of Manuscript:  Special Section PAPER (Special Section on Microelectronic Test Structures)
Category: 
Keyword: 
MOSFETphotoemissionhot carriergate length
 Summary | Full Text:PDF

A New Test Structure for Precise Location Measurement of Hot-Carrier-Induced Photoemission Peak in Subquarter-Micron MOSFETs
Toshihiro MATSUDA Mari FUNADA Takashi OHZONE Etsumasa KAMEDA Shinji ODANAKA Kyoji TAMASHITA Norio KOIKE Ken-ichiro TATSUUMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5  pp. 1125-1133
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: 
Keyword: 
test structureMOSFEThot carrierphotoemission
 Summary | Full Text:PDF