Ken NAKATA


Low Leakage Current ITO Schottky Electrodes for AlGaN/GaN HEMTs
Keita MATSUDA Takeshi KAWASAKI Ken NAKATA Takeshi IGARASHI Seiji YAEGASSI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7  pp. 1015-1019
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: GaN Process Technology
Keyword: 
ITOSchottky gatetunnelAlGaN/GaN HEMTgate leakage current
 Summary | Full Text:PDF(511KB)

An InGaP/GaAs Composite Channel FET for High Power Device Applications
Shigeru NAKAJIMA Ken NAKATA Kunio TANAKA Kenji OTOBE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1300-1305
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
high power deviceInGaPFETelectron transport
 Summary | Full Text:PDF(542.5KB)