Ken NAKAHARA


An Evaluation of a New Type of High Efficiency Hybrid Gate Drive Circuit for SiC-MOSFET Suitable for Automotive Power Electronics System Applications
Masayoshi YAMAMOTO Shinya SHIRAI Senanayake THILAK Jun IMAOKA Ryosuke ISHIDO Yuta OKAWAUCHI Ken NAKAHARA 
Publication:   
Publication Date: 2022/05/01
Vol. E105-A  No. 5  pp. 834-843
Type of Manuscript:  INVITED PAPER (Special Section on Analog Circuit Techniques and Related Topics)
Category: 
Keyword: 
SiC-MOSFETgate-drivercurrent-sourcevoltage-sourcegate resistance
 Summary | Full Text:PDF

Deep-Donor-Induced Suppression of Current Collapse in an AlGaN-GaN Heterojunction Structure Grown on Si
Taketoshi TANAKA Norikazu ITO Shinya TAKADO Masaaki KUZUHARA Ken NAKAHARA 
Publication:   
Publication Date: 2020/04/01
Vol. E103-C  No. 4  pp. 186-190
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
AlGaN/GaN HFETsdeep donordeep acceptorGaNsemi-insulating
 Summary | Full Text:PDF