Kazuyoshi TORII

Gate-Last MISFET Structures and Process for Characterization of High-k and Metal Gate MISFETs
Takeo MATSUKI Kazuyoshi TORII Takeshi MAEDA Yasushi AKASAKA Kiyoshi HAYASHI Naoki KASAI Tsunetoshi ARIKADO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/05/01
Vol. E88-C  No. 5  pp. 804-810
Type of Manuscript:  Special Section PAPER (Special Section on Microelectronic Test Structures)
Category: 
Keyword: 
MOSFET, high-k, metal-gate, gate-last, 
 Summary | Full Text:PDF(857KB)
Effect of Purge Time on the Properties of HfO2 Films Prepared by Atomic Layer Deposition
Takaaki KAWAHARA Kazuyoshi TORII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/01/01
Vol. E87-C  No. 1  pp. 2-8
Type of Manuscript:  Special Section PAPER (Special Section on High-κ Gate Dielectrics)
Category: 
Keyword: 
CMOSFET, high-κ gate dielectric, HfO2, atomic layer deposition, long purge, impurity, gate leakage current, 
 Summary | Full Text:PDF(1.1MB)
A High-Endurance Read/Write Scheme for Half-Vcc Plate Nonvolatile DRAMs with Ferroelectric Capacitors
Hiroki FUJISAWA Takeshi SAKATA Tomonori SEKIGUCHI Kazuyoshi TORII Katsutaka KIMURA Kazuhiko KAJIGAYA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/06/01
Vol. E84-C  No. 6  pp. 763-770
Type of Manuscript:  Special Section PAPER (Special Issue on Nonvolatile Memories)
Category: FeRAMs
Keyword: 
DRAM, ferroelectric memory, high speed, low-power, high-endurance, 
 Summary | Full Text:PDF(775.3KB)