Kazuyoshi TORII


Gate-Last MISFET Structures and Process for Characterization of High-k and Metal Gate MISFETs
Takeo MATSUKI Kazuyoshi TORII Takeshi MAEDA Yasushi AKASAKA Kiyoshi HAYASHI Naoki KASAI Tsunetoshi ARIKADO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2005/05/01
Vol. E88-C  No. 5  pp. 804-810
Type of Manuscript:  Special Section PAPER (Special Section on Microelectronic Test Structures)
Category: 
Keyword: 
MOSFEThigh-kmetal-gategate-last
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Effect of Purge Time on the Properties of HfO2 Films Prepared by Atomic Layer Deposition
Takaaki KAWAHARA Kazuyoshi TORII 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/01/01
Vol. E87-C  No. 1  pp. 2-8
Type of Manuscript:  Special Section PAPER (Special Section on High-κ Gate Dielectrics)
Category: 
Keyword: 
CMOSFEThigh-κ gate dielectricHfO2atomic layer depositionlong purgeimpuritygate leakage current
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A High-Endurance Read/Write Scheme for Half-Vcc Plate Nonvolatile DRAMs with Ferroelectric Capacitors
Hiroki FUJISAWA Takeshi SAKATA Tomonori SEKIGUCHI Kazuyoshi TORII Katsutaka KIMURA Kazuhiko KAJIGAYA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/06/01
Vol. E84-C  No. 6  pp. 763-770
Type of Manuscript:  Special Section PAPER (Special Issue on Nonvolatile Memories)
Category: FeRAMs
Keyword: 
DRAMferroelectric memoryhigh speedlow-powerhigh-endurance
 Summary | Full Text:PDF