Kazuyoshi ASAI


Three-Dimensional Passive Elements for Compact GaAs MMICs
Makoto HIRANO Yuhki IMAI Ichihiko TOYODA Kenjiro NISHIKAWA Masami TOKUMITSU Kazuyoshi ASAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/06/25
Vol. E76-C  No. 6  pp. 961-967
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functions and Size-Reductions)
Category: 
Keyword: 
three-dimensionalpassive elementsGaAsMMICs
 Summary | Full Text:PDF(740.6KB)

BP-LDD n+ Self-Aligned GaAs-MESFET with Au/WSiN Gate and Its Application to 0.5-30 GHz Distributed Amplifier
Kiyomitsu ONODERA Masami TOKUMITSU Noboru TAKACHIO Hiroyuki KIKUCHI Kazuyoshi ASAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1991/12/25
Vol. E74-C  No. 12  pp. 4131-4135
Type of Manuscript:  Special Section PAPER (Special Issue on Millimeter-Wave/Heterojunction Devices)
Category: 
Keyword: 
 Summary | Full Text:PDF(516KB)

A 31 GHz Static Frequency Divider Using Au/WSiN Gate GaAs MESFETs
Masami TOKUMITSU Kiyomitsu ONODERA Hiroki SUTOH Kazuyoshi ASAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1991/12/25
Vol. E74-C  No. 12  pp. 4136-4140
Type of Manuscript:  Special Section PAPER (Special Issue on Millimeter-Wave/Heterojunction Devices)
Category: 
Keyword: 
 Summary | Full Text:PDF(412.4KB)

Microwave Characteristic and Application of Au/WSiN GaAs-MESFETs with Neutral Buried p-Layers
Kiyomitsu ONODERA Yuhki IMAI Kazuyoshi ASAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1991/05/25
Vol. E74-C  No. 5  pp. 1197-1201
Type of Manuscript:  Special Section PAPER (Special Issue on the 3rd Asia-Pacific Microwave Conference)
Category: Active Devices and Circuits
Keyword: 
 Summary | Full Text:PDF(401.1KB)

GaAs Universal Multiplexer/demultiplexer using LSCFL
Tohru TAKADA Kazuhiko NOZAWA Masao IDA Kazuyoshi ASAI 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1986/04/25
Vol. E69-E  No. 4  pp. 299-301
Type of Manuscript:  Special Section LETTER (Special Issue: Papers from 1986 National Convention IECE Japan)
Category: Compound Semiconductor Devices
Keyword: 
 Summary | Full Text:PDF(345.4KB)