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BP-LDD n+ Self-Aligned GaAs-MESFET with Au/WSiN Gate and Its Application to 0.5-30 GHz Distributed Amplifier
Kiyomitsu ONODERA Masami TOKUMITSU Noboru TAKACHIO Hiroyuki KIKUCHI Kazuyoshi ASAI | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1991/12/25
Vol. E74-C
No. 12
pp. 4131-4135
Type of Manuscript:
Special Section PAPER (Special Issue on Millimeter-Wave/Heterojunction Devices)
Category:
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A 31 GHz Static Frequency Divider Using Au/WSiN Gate GaAs MESFETs
Masami TOKUMITSU Kiyomitsu ONODERA Hiroki SUTOH Kazuyoshi ASAI | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1991/12/25
Vol. E74-C
No. 12
pp. 4136-4140
Type of Manuscript:
Special Section PAPER (Special Issue on Millimeter-Wave/Heterojunction Devices)
Category:
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Microwave Characteristic and Application of Au/WSiN GaAs-MESFETs with Neutral Buried p-Layers
Kiyomitsu ONODERA Yuhki IMAI Kazuyoshi ASAI | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1991/05/25
Vol. E74-C
No. 5
pp. 1197-1201
Type of Manuscript:
Special Section PAPER (Special Issue on the 3rd Asia-Pacific Microwave Conference)
Category: Active Devices and Circuits
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GaAs Universal Multiplexer/demultiplexer using LSCFL
Tohru TAKADA Kazuhiko NOZAWA Masao IDA Kazuyoshi ASAI | Publication: IEICE TRANSACTIONS (1976-1990)
Publication Date: 1986/04/25
Vol. E69-E
No. 4
pp. 299-301
Type of Manuscript:
Special Section LETTER (Special Issue: Papers from 1986 National Convention IECE Japan)
Category: Compound Semiconductor Devices
Keyword:
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