Kazuya NISHIHORI


Numerical Analysis of the Effect of P-Regions on the I-V Kink in GaAs MESFETs
Kazuya NISHIHORI Yasuyuki MIYAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/08/01
Vol. E90-C  No. 8  pp. 1643-1649
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
GaAs MESFETburied-p-typep-pocket-typeI-V kinkimpact ionizationhole accumulation
 Summary | Full Text:PDF

A 15-50 GHz-Band GaAs MMIC Variable Attenuator with 20-dB Attenuation Control
Kazuya NISHIHORI Shigeru WATANABE Fumio SASAKI Kazuhiro ARAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1543-1547
Type of Manuscript:  Special Section PAPER (Special Issue on Millimeter-Wave Circuits and Fabrication Technologies Opening up the 21st Century)
Category: 
Keyword: 
microwave and millimeter-wavevariable attenuatorGaAs MMICHEMTbalanced distributed configuration
 Summary | Full Text:PDF

A Buried-Channel Self-Aligned GaAs MESFET with High Power-Efficiency and Low Noise-Figure for 1.9-GHz Single-Chip Front-End MMICs
Kazuya NISHIHORI Atsushi KAMEYAMA Yoshiaki KITAURA Yoshikazu TANABE Masakatsu MIHARA Misao YOSHIMURA Mayumi HIROSE Naotaka UCHITOMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/12/25
Vol. E80-C  No. 12  pp. 1586-1591
Type of Manuscript:  Special Section PAPER (Special Issue on Low-Power and High-Speed LSI Technologies)
Category: 
Keyword: 
GaAs MESFETburied channelion-implantationMMICpower-added efficiencynoise figure
 Summary | Full Text:PDF

Gate Current Control Method by Pull-Down FET's for 0-28 dB GaAs Variable Attenuator in Direct-Conversion Modulator IC for 1.9 GHz PHS
Tadahiro SASAKI Shoji OTAKA Tadahiko MAEDA Toshiyuki UMEDA Kazuya NISHIHORI Atsushi KAMEYAMA Mayumi HIROSE Yoshiaki KITAURA Naotaka UCHITOMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/06/25
Vol. E80-C  No. 6  pp. 794-799
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeterwave High-power Devices)
Category: 
Keyword: 
GaAsdirect-conversionattenuatormodulatorMMICMESFETpersonal handy phone system
 Summary | Full Text:PDF