Kazunori KAWAMOTO


A 25 kV ESD Proof LDMOSFET with a Turn-on Discharge MOSFET
Kazunori KAWAMOTO Kenji KOHNO Yasushi HIGUCHI Seiji FUJINO Isao SHIRAKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/06/01
Vol. E84-C  No. 6  pp. 823-831
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
LDMOSFETESDstatic dischargethick SOI
 Summary | Full Text:PDF

A 200 V CMOS SOI IC with Field-Plate Trench Isolation for EL Displays
Kazunori KAWAMOTO Hitoshi YAMAGUCHI Hiroaki HIMI Seiji FUJINO Isao SHIRAKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/02/01
Vol. E84-C  No. 2  pp. 260-266
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
high voltage CMOSthick SOItrench isolationEL driverLDMOS
 Summary | Full Text:PDF

200 V Rating CMOS Transistor Structure with Intrinsic SOI Substrate
Hitoshi YAMAGUCHI Shigeyuki AKITA Hiroaki HIMI Kazunori KAWAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/12/25
Vol. E83-C  No. 12  pp. 1961-1967
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
high breakdown voltageCMOS transistorelectric field relaxationSOIintrinsic layer
 Summary | Full Text:PDF