Kazunori FURUSAWA


A 126 mm2 4-Gb Multilevel AG-AND Flash Memory with Inversion-Layer-Bit-Line Technology
Hideaki KURATA Satoshi NODA Yoshitaka SASAGO Kazuo OTSUGA Tsuyoshi ARIGANE Tetsufumi KAWAMURA Takashi KOBAYASHI Hitoshi KUME Kazuki HOMMA Teruhiko ITO Yoshinori SAKAMOTO Masahiro SHIMIZU Yoshinori IKEDA Osamu TSUCHIYA Kazunori FURUSAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/11/01
Vol. E90-C  No. 11  pp. 2146-2156
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
flash memorymultilevelinversion-layer-bit-lineAG-AND
 Summary | Full Text:PDF(2.3MB)

A 130-nm CMOS 95-mm2 1-Gb Multilevel AG-AND-Type Flash Memory with 10-MB/s Programming Throughput
Hideaki KURATA Shunichi SAEKI Takashi KOBAYASHI Yoshitaka SASAGO Tsuyoshi ARIGANE Keiichi YOSHIDA Yoshinori TAKASE Takayuki YOSHITAKE Osamu TSUCHIYA Yoshinori IKEDA Shunichi NARUMI Michitaro KANAMITSU Kazuto IZAWA Kazunori FURUSAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/10/01
Vol. E89-C  No. 10  pp. 1469-1479
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
flash memoryAG-ANDmultilevelhigh speed programmingCCIP
 Summary | Full Text:PDF(2.1MB)

A 3 Volt 1 Mbit Full-Featured EEPROM Using a Highly-Reliable MONOS Device Technology
Shin-ichi MINAMI Kazuaki UJIIE Masaaki TERASAWA Kazuhiro KOMORI Kazunori FURUSAWA Yoshiaki KAMIGAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/08/25
Vol. E77-C  No. 8  pp. 1260-1269
Type of Manuscript:  Special Section PAPER (Special Section on High Speed and High Density Multi Functional LSI Memories)
Category: Non-volatile Memory
Keyword: 
low-voltage operationnonvoltatile semiconductor memoryEEPROMMONOS device
 Summary | Full Text:PDF(908.2KB)