Kazunori ASANO


High Power GaAs Heterojunction FET with Dual Field-Modulating-Plates for 28 V Operated W-CDMA Base Station
Kouji ISHIKURA Isao TAKENAKA Hidemasa TAKAHASHI Kouichi HASEGAWA Kazunori ASANO Naotaka IWATA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5  pp. 923-928
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Compound Semiconductor and Power Devices
Keyword: 
heterojunction FETshigh-voltage operationpower amplifiersfield-modulating-plate
 Summary | Full Text:PDF

Improved IMD Characteristics in L/S-Band GaAs FET Power Amplifiers by Lowering Drain Bias Circuit Impedance
Isao TAKENAKA Hidemasa TAKAHASHI Kazunori ASANO Kohji ISHIKURA Junko MORIKAWA Hiroaki TSUTSUI Masaaki KUZUHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/05/25
Vol. E82-C  No. 5  pp. 730-736
Type of Manuscript:  Special Section PAPER (Special Issue on Low Distortion Technology for Microwave Devices and Circuits)
Category: 
Keyword: 
AlGaAs/GaAs HFETpower amplifierdistortionIM3NPRbias circuitpush-pull
 Summary | Full Text:PDF

Step-Recessed Gate Structure with an Undoped Surface Layer for Microwave and Millimeter-Wave High Power, High Efficiency GaAs MESFETs
Hidemasa TAKAHASHI Kazunori ASANO Kouji MATSUNAGA Naotaka IWATA Akira MOCHIZUKI Hiromitsu HIRAYAMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1991/12/25
Vol. E74-C  No. 12  pp. 4141-4146
Type of Manuscript:  Special Section PAPER (Special Issue on Millimeter-Wave/Heterojunction Devices)
Category: 
Keyword: 
 Summary | Full Text:PDF