Kazunari ISHIMARU


High-Density Full-CMOS SRAM Cell Technology with a Deep Sub-Micron Spacing between nMOS and pMOSFET
Fumitomo MATSUOKA Kazunari ISHIMARU Hiroshi GOJOHBORI Hidetoshi KOIKE Yukari UNNO Manabu SAI Toshiyuki KONDO Ryuji ICHIKAWA Masakazu KAKUMU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/08/25
Vol. E77-C  No. 8  pp. 1385-1394
Type of Manuscript:  Special Section PAPER (Special Section on High Speed and High Density Multi Functional LSI Memories)
Category: General Technology
Keyword: 
full-CMOS SRAM cellshallow trench isolationdual gate CMOS
 Summary | Full Text:PDF

Characteristics of a-Si: H Thin Films Fabricated at Various Substrate Bias Outside of Microwave Discharge Plasma
Kazunari ISHIMARU Tetsuya TATSUMI Isamu KATO 
Publication:   IEICE TRANSACTIONS (1976-1990)
Publication Date: 1988/04/25
Vol. E71-E  No. 4  pp. 299-300
Type of Manuscript:  Special Section LETTER (Special Issue: Papers from 1988 Spring Convention IEICE)
Category: Semiconductor Devices and Integrated Circuits
Keyword: 
 Summary | Full Text:PDF