Kazunao SATO


High-Efficiency 0.1 cc Power Amplifier Module for 900 MHz Personal Digital Cellular Telephones
Akira INOUE Akira OHTA Takahiro NAKAMOTO Shigeki KAGEYAMA Toshiaki KITANO Hideaki KATAYAMA Toshikazu OGATA Noriyuki TANINO Kazunao SATO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C  No. 11  pp. 1906-1912
Type of Manuscript:  Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: RF Power Devices
Keyword: 
microwave power amplifiermicrowave power transistorpower efficiency
 Summary | Full Text:PDF(1.6MB)

A 100 W S-Band AlGaAs/GaAs Heterostructure FET for Base Stations of Wireless Personal Communications
Seiki GOTO Kenichi FUJII Tetsuo KUNII Satoshi SUZUKI Hiroshi KAWATA Shinichi MIYAKUNI Naohito YOSHIDA Susumu SAKAMOTO Takashi FUJIOKA Noriyuki TANINO Kazunao SATO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C  No. 11  pp. 1936-1942
Type of Manuscript:  Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: RF Power Devices
Keyword: 
high-power FETHFETbase stationlow distortionmicrowave
 Summary | Full Text:PDF(1.6MB)

(Ba0.75Sr0.25)TiO3 Films for 256 Mbit DRAM
Tsuyoshi HORIKAWA Noboru MIKAMI Hiromi ITO Yoshikazu OHNO Tetsuro MAKITA Kazunao SATO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/03/25
Vol. E77-C  No. 3  pp. 385-391
Type of Manuscript:  Special Section PAPER (Special Issue on Quarter Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
(Ba,Sr)TiO3ferroelectricDRAMsputteringgrain size effect
 Summary | Full Text:PDF(701KB)