Kazumi NISHIMURA


Symmetric and Asymmetric InGaP/InGaAs/GaAs Heterostructure MESFETs and Their Application to V-Band Amplifiers
Kiyomitsu ONODERA Kazumi NISHIMURA Takumi NITTONO Yasuro YAMANE Kimiyoshi YAMASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/06/25
Vol. E81-C  No. 6  pp. 868-875
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology)
Category: Semiconductor Devices and Amplifiers
Keyword: 
GaAsMESFETV-band amplifier
 Summary | Full Text:PDF(781KB)

A 0.1 µm Au/WSiN Gate GaAs MESFET with New BP-LDD Structure and Its Applications
Masami TOKUMITSU Kazumi NISHIMURA Makoto HIRANO Kimiyoshi YAMASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9  pp. 1189-1194
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices)
Category: 
Keyword: 
WSiNrefractory metalfrequency dividerGaAs MESFETBP-LDD
 Summary | Full Text:PDF(545.5KB)

A WSiN-Gate GaAs HMESFET with an Asymmetric LDD Structure for MMICs
Kazumi NISHIMURA Kiyomitsu ONODERA Kou INOUE Masami TOKUMITSU Fumiaki HYUGA Kimiyoshi YAMASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/08/25
Vol. E78-C  No. 8  pp. 907-910
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology)
Category: 
Keyword: 
WSiNInGaPasymmetric LDD structureGaAsMMIC
 Summary | Full Text:PDF(474.1KB)