Kazumi NISHIMURA

Symmetric and Asymmetric InGaP/InGaAs/GaAs Heterostructure MESFETs and Their Application to V-Band Amplifiers
Kiyomitsu ONODERA Kazumi NISHIMURA Takumi NITTONO Yasuro YAMANE Kimiyoshi YAMASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/06/25
Vol. E81-C  No. 6  pp. 868-875
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Module Technology)
Category: Semiconductor Devices and Amplifiers
Keyword: 
GaAs, MESFET, V-band amplifier, 
 Summary | Full Text:PDF
A 0.1 µm Au/WSiN Gate GaAs MESFET with New BP-LDD Structure and Its Applications
Masami TOKUMITSU Kazumi NISHIMURA Makoto HIRANO Kimiyoshi YAMASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9  pp. 1189-1194
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed Electron Devices)
Category: 
Keyword: 
WSiN, refractory metal, frequency divider, GaAs MESFET, BP-LDD, 
 Summary | Full Text:PDF
A WSiN-Gate GaAs HMESFET with an Asymmetric LDD Structure for MMICs
Kazumi NISHIMURA Kiyomitsu ONODERA Kou INOUE Masami TOKUMITSU Fumiaki HYUGA Kimiyoshi YAMASAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/08/25
Vol. E78-C  No. 8  pp. 907-910
Type of Manuscript:  Special Section PAPER (Special Issue on Microwave and Millimeter-Wave Technology)
Category: 
Keyword: 
WSiN, InGaP, asymmetric LDD structure, GaAs, MMIC, 
 Summary | Full Text:PDF