Kazukiyo JOSHIN

Robust Q-Band InP- and GaN-HEMT Low Noise Amplifiers
Masaru SATO Yoshitaka NIIDA Toshihide SUZUKI Yasuhiro NAKASHA Yoichi KAWANO Taisuke IWAI Naoki HARA Kazukiyo JOSHIN 
Publication:   
Publication Date: 2017/05/01
Vol. E100-C  No. 5  pp. 417-423
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
common gate amplifier, GaN HEMT, InP HEMT, low noise amplifier, 
 Summary | Full Text:PDF
Millimeter-Wave GaN HEMT for Power Amplifier Applications
Kazukiyo JOSHIN Kozo MAKIYAMA Shiro OZAKI Toshihiro OHKI Naoya OKAMOTO Yoshitaka NIIDA Masaru SATO Satoshi MASUDA Keiji WATANABE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/10/01
Vol. E97-C  No. 10  pp. 923-929
Type of Manuscript:  INVITED PAPER (Special Section on Recent Progress in Microwave and Millimeter-wave Technologies)
Category: 
Keyword: 
GaN HEMT, Millimeter-wave, Power amplifier, Device modeling, 
 Summary | Full Text:PDF
FOREWORD
Kazukiyo JOSHIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/11/01
Vol. E91-C  No. 11  pp. 1719-1719
Type of Manuscript:  FOREWORD
Category: 
Keyword: 
 Summary | Full Text:PDF
High Power GaN-HEMT for Wireless Base Station Applications
Toshihide KIKKAWA Kazukiyo JOSHIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/05/01
Vol. E89-C  No. 5  pp. 608-615
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Compound Semiconductor Devices
Keyword: 
GaN, HEMT, base station, amplifier, W-CDMA, 
 Summary | Full Text:PDF
100-GHz Ultra-Broadband Distributed Amplifier in Chip-Size Package
Satoshi MASUDA Kazuhiko KOBAYASHI Hidehiko KIRA Masayuki KITAJIMA Kazukiyo JOSHIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/07/01
Vol. E87-C  No. 7  pp. 1197-1203
Type of Manuscript:  PAPER
Category: Microwaves, Millimeter-Waves
Keyword: 
chip-size package (CSP), distributed amplifier, inverted microstrip line, grounded coplanar waveguide, flip-chip, InP HEMT, millimeter-wave, lead-free solder, 
 Summary | Full Text:PDF
InGaP-Channel Field Effect Transistors with High Breakdown Voltage
Naoki HARA Yasuhiro NAKASHA Toshihide KIKKAWA Kazukiyo JOSHIN Yuu WATANABE Hitoshi TANAKA Masahiko TAKIKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1294-1299
Type of Manuscript:  INVITED PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
InGaP-channel FET, high breakdown voltage, high operating voltage, low distortion, 
 Summary | Full Text:PDF
Harmonic Feedback Circuit Effects on Intermodulation Products and Adjacent Channel Leakage Power in HBT Power Amplifier for 1. 95 GHz Wide-Band CDMA Cellular Phones
Kazukiyo JOSHIN Yasuhiro NAKASHA Taisuke IWAI Takumi MIYASHITA Shiro OHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/05/25
Vol. E82-C  No. 5  pp. 725-729
Type of Manuscript:  Special Section PAPER (Special Issue on Low Distortion Technology for Microwave Devices and Circuits)
Category: 
Keyword: 
heterojunction bipolar transistor, intermodulation, harmonics, W-CDMA, 
 Summary | Full Text:PDF