Kazuki OTA


High Power GaN-FET Amplifier with Reduced Memory Effects for W-CDMA Base Stations
Akio WAKEJIMA Kohji MATSUNAGA Yuji ANDO Tatsuo NAKAYAMA Yasuhiro OKAMOTO Kazuki OTA Naotaka KURODA Masahiro TANOMURA Hironobu MIYAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5  pp. 929-936
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Compound Semiconductor and Power Devices
Keyword: 
GaN-FETamplifiermemory effectsbaseband impedancedigital predistortionW-CDMA
 Summary | Full Text:PDF(688.2KB)

High Power Density and Low Distortion InGaP Channel FETs with Field-Modulating Plate
Akio WAKEJIMA Kazuki OTA Kohji MATSUNAGA Masaaki KUZUHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/12/01
Vol. E85-C  No. 12  pp. 2041-2045
Type of Manuscript:  Special Section PAPER (Special Issue on Low-Distortion,High-Power,High-Efficiency Active Device and Circuit Technology)
Category: 
Keyword: 
field-modulating plateInGaPfield effect transistor (FET)intermodulation distortion
 Summary | Full Text:PDF(516.6KB)