Kazuhiro MATSUYAMA


Double Self-Aligned Contact Technology for Shielded Bit Line Type Stacked Capacitor Cell of 16 MDRAM
Masanori FUKUMOTO Yasushi NAITO Kazuhiro MATSUYAMA Hisashi OGAWA Koji MATSUOKA Takashi HORI Hiroyuki SAKAI Ichiro NAKAO Hisakazu KOTANI Hiroshi IWASAKI Michihiro INOUE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1991/04/25
Vol. E74-C  No. 4  pp. 818-826
Type of Manuscript:  Special Section PAPER (Special Issue on LSI Memories)
Category: DRAM
Keyword: 
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