IEICE Trans

Kazuhiko ENDO

Independent-Double-Gate FinFET SRAM Technology Kazuhiko ENDO Shin-ichi OUCHI Takashi MATSUKAWA Yongxun LIU Meishoku MASAHARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/04/01 Vol. E96-C No. 4 pp. 413-423 Type of Manuscript: INVITED PAPER (Special Section on Solid-State Circuit Design—Architecture, Circuit, Device and Design Methodology) Category: Keyword: multi-gate devices, FinFET, SRAM, noise margin,
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A 0.7-V Opamp in Scaled Low-Standby-Power FinFET Technology Shin-ichi O'UCHI Kazuhiko ENDO Takashi MATSUKAWA Yongxun LIU Tadashi NAKAGAWA Yuki ISHIKAWA Junichi TSUKADA Hiromi YAMAUCHI Toshihiro SEKIGAWA Hanpei KOIKE Kunihiro SAKAMOTO Meishoku MASAHARA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/04/01 Vol. E95-C No. 4 pp. 686-695 Type of Manuscript: Special Section PAPER (Special Section on Solid-State Circuit Design – Architecture, Circuit, Device and Design Methodology) Category: Keyword: Common-Double-Gate FinFET, Independent-Double-Gate FinFET, common-mode voltage range, low voltage, differential amplifier, source follower,
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High-Frequency Precise Characterization of Intrinsic FinFET Channel Hideo SAKAI Shinichi O'UCHI Takashi MATSUKAWA Kazuhiko ENDO Yongxun LIU Junichi TSUKADA Yuki ISHIKAWA Tadashi NAKAGAWA Toshihiro SEKIGAWA Hanpei KOIKE Kunihiro SAKAMOTO Meishoku MASAHARA Hiroki ISHIKURO
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2012/04/01 Vol. E95-C No. 4 pp. 752-760 Type of Manuscript: PAPER Category: Semiconductor Materials and Devices Keyword: FinFET, SOI, De-embedding, RF, device modeling,
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FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current Reduction Shin-ichi O'UCHI Meishoku MASAHARA Kazuhiko ENDO Yongxun LIU Takashi MATSUKAWA Kunihiro SAKAMOTO Toshihiro SEKIGAWA Hanpei KOIKE Eiichi SUZUKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/04/01 Vol. E91-C No. 4 pp. 534-542 Type of Manuscript: Special Section PAPER (Special Section on Advanced Technologies in Digital LSIs and Memories) Category: Keyword: SRAM, FinFET, 4T-FinFET, standby power, dynamic threshold-voltage control,
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Suppression of Charges in Al₂O₃ Gate Dielectric and Improvement of MOSFET Performance by Plasma Nitridation Kenzo MANABE Kazuhiko ENDO Satoshi KAMIYAMA Toshiyuki IWAMOTO Takashi OGURA Nobuyuki IKARASHI Toyoji YAMAMOTO Toru TATSUMI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2004/01/01 Vol. E87-C No. 1 pp. 30-36 Type of Manuscript: Special Section PAPER (Special Section on High-κ Gate Dielectrics) Category: Keyword: high-κ gate dielectric, aluminum oxide, plasma nitridation, fixed charge, MOSFET performance,
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