Katsuya MIURA


Transient Characteristic of Fabricated Magnetic Tunnel Junction (MTJ) Programmed with CMOS Circuit
Masashi KAMIYANAGI Fumitaka IGA Shoji IKEDA Katsuya MIURA Jun HAYAKAWA Haruhiro HASEGAWA Takahiro HANYU Hideo OHNO Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5  pp. 602-607
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Flash/Advanced Memory
Keyword: 
spin-transfer torque random access memory (STT-RAM)tunnel magnetoresistance (TMR)spin-injectionmagnetic tunnel junction (MTJ)CMOS
 Summary | Full Text:PDF

Study of the DC Performance of Fabricated Magnetic Tunnel Junction Integrated on Back-End Metal Line of CMOS Circuits
Fumitaka IGA Masashi KAMIYANAGI Shoji IKEDA Katsuya MIURA Jun HAYAKAWA Haruhiro HASEGAWA Takahiro HANYU Hideo OHNO Tetsuo ENDOH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5  pp. 608-613
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Flash/Advanced Memory
Keyword: 
magnetic tunnel junction (MTJ)spin-transfer torque RAM (STT-RAM)tunnel magnetoresistance (TMR)magnetoresistive RAM (MRAM)current-induced magnetization switching
 Summary | Full Text:PDF