Katsumi TSUNENO

A New Hierarchical RSM for TCAD-Based Device Design in 0.4µm CMOS Development
Hisako SATO Katsumi TSUNENO Kimiko AOYAMA Takahide NAKAMURA Hisaaki KUNITOMO Hiroo MASUDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/02/25
Vol. E79-C  No. 2  pp. 226-233
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: Statistical Analysis
Keyword: 
TCAD, RSM, CMOS design, 
 Summary | Full Text:PDF
Modeling and Simulation on Degradation of Submicron NMOSFET Current Drive due to Velocity-Saturation Effects
Katsumi TSUNENO Hisako SATO Hiroo MASUDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/02/25
Vol. E77-C  No. 2  pp. 161-165
Type of Manuscript:  Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Device Simulation
Keyword: 
degradation of drain current, velocity-saturation, Idso, lateral electric field, 
 Summary | Full Text:PDF
Evaluation of Two-Dimensional Transient Enhanced Diffusion of Phosphorus during Shallow Junction Formation
Hisako SATO Katsumi TSUNENO Hiroo MASUDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/02/25
Vol. E77-C  No. 2  pp. 106-111
Type of Manuscript:  Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93))
Category: Process Simulation
Keyword: 
transient enhanced diffusion, two-dimension, phosphorus, silicon, shallow junction, furnace annealing, 
 Summary | Full Text:PDF