Katsumi EIKYU


3-D Topography and Impurity Integrated Process Simulator (3-D MIPS) and Its Applications
Masato FUJINAGO Tatsuya KUNIKIYO Tetsuya UCHIDA Eiji TSUKUDA Kenichiro SONODA Katsumi EIKYU Kiyoshi ISHIKAWA Tadashi NISHIMURA Satoru KAWAZU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C  No. 6  pp. 848-861
Type of Manuscript:  Special Section PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
LSI fabricationprocess simulatortopographyimpurity diffusionsegregationcapacitance
 Summary | Full Text:PDF

2-Dimensional Simulation of FN Current Suppression Including Phonon Assisted Tunneling Model in Silicon Dioxide
Katsumi EIKYU Kiyohiko SAKAKIBARA Kiyoshi ISHIKAWA Tadashi NISHIMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/06/25
Vol. E82-C  No. 6  pp. 889-893
Type of Manuscript:  Special Section PAPER (Special Issue on TCAD for Semiconductor Industries)
Category: 
Keyword: 
neutral trapphonon assisted tunnelingFN currentendurance characteristic
 Summary | Full Text:PDF