Katsumasa KAMIYA


Possibility of Metal-Oxide-Nitride-Oxide-Semiconductor Memories for Long Lifespan Archive Memories
Hiroki SHIRAKAWA Keita YAMAGUCHI Masaaki ARAIDAI Katsumasa KAMIYA Kenji SHIRAISHI 
Publication:   
Publication Date: 2017/10/01
Vol. E100-C  No. 10  pp. 928-933
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MONOSarchive memoriescharge trap memoriesfirst principals calculation
 Summary | Full Text:PDF(1.6MB)

An Atomistic Study on Hydrogenation Effects toward Quality Improvement of Program/Erase Cycle of MONOS-Type Memory
Akira OTAKE Keita YAMAGUCHI Katsumasa KAMIYA Yasuteru SHIGETA Kenji SHIRAISHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 693-698
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
non-volatile memoryMONOSSiNfirst principles calculationcharge trap memory
 Summary | Full Text:PDF(1.1MB)