| Jinn-Shyan WANG
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Design of 65 nm Sub-Threshold SRAM Using the Bitline Leakage Prediction Scheme and the Non-trimmed Sense Amplifier Jinn-Shyan WANG Pei-Yao CHANG Chi-Chang LIN | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2012/01/01
Vol. E95-C
No. 1
pp. 172-175
Type of Manuscript:
BRIEF PAPER Category: Integrated Electronics Keyword: SRAM, subthreshold, variations, | | Summary | Full Text:PDF | |
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