Jeong Hee PARK


A 0.24 µm PRAM Cell Technology Using N-Doped GeSbTe Films
Hideki HORII Jeong Hee PARK Ji Hye YI Bong Jin KUH Yong Ho HA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2004/10/01
Vol. E87-C  No. 10  pp. 1673-1678
Type of Manuscript:  Special Section PAPER (Special Section on New Era of Nonvolatile Memories)
Category: Phase Change RAM
Keyword: 
PRAMphase changeGeSbTeCMOSmemoryN-dopedchalcogenide
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