Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C
No. 3
pp. 284-294
Type of Manuscript:
INVITED PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category:
Keyword:
modeling, stresses, finite element, silicon technologies, front/back end of line, |