Hyunjin LEE


Novel Structures for a 2-Bit per Cell of Nonvolatile Memory Using an Asymmetric Double Gate
Kuk-Hwan KIM Hyunjin LEE Yang-Kyu CHOI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/05/01
Vol. E89-C  No. 5  pp. 578-584
Type of Manuscript:  Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices)
Category: Si Devices and Processes
Keyword: 
MONOSSONOSFowler-Nordheim tunnelingflash memoryasymmetric double gatenonvolatile memory
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Characteristics of MOSFET with Non-overlapped Source-Drain to Gate
Hyunjin LEE Sung-il CHANG Jongho LEE Hyungcheol SHIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5  pp. 1079-1085
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Sub-0.1 µm CMOS Devices)
Category: 
Keyword: 
non-overlap50 nm MOSFETSCEextended source/drain
 Summary | Full Text:PDF