Hyungcheol SHIN


L-Shaped Tunneling Field-Effect Transistors for Complementary Logic Applications
Sang Wan KIM Woo Young CHOI Min-Chul SUN Hyun Woo KIM Jong-Ho LEE Hyungcheol SHIN Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5  pp. 634-638
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
L-shaped TFETssubthreshold swingsteep slopecomplementary logic function
 Summary | Full Text:PDF

Simulation Study on Dependence of Channel Potential Self-Boosting on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Devices
Seongjae CHO Jung Hoon LEE Yoon KIM Jang-Gn YUN Hyungcheol SHIN Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5  pp. 596-601
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Flash/Advanced Memory
Keyword: 
NANDflash memoryprogram inhibitionself-boostingFinFETdevice simulation
 Summary | Full Text:PDF

Simulation of Retention Characteristics in Double-Gate Structure Multi-Bit SONOS Flash Memory
Doo-Hyun KIM Il Han PARK Seongjae CHO Jong Duk LEE Hyungcheol SHIN Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5  pp. 659-663
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
SONOSflash memorynitride-based charge trap memoryretentionmulti-bitdouble gate
 Summary | Full Text:PDF

Application of the Compact Channel Thermal Noise Model of Short Channel MOSFETs to CMOS RFIC Design
Jongwook JEON Ickhyun SONG Jong Duk LEE Byung-Gook PARK Hyungcheol SHIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5  pp. 627-634
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
CMOSchannel thermal noiseradio frequency integrated circuit (RFIC)low noise amplifier (LNA)noise figure
 Summary | Full Text:PDF

Design Consideration for Vertical Nonvolatile Memory Device Regarding Gate-Induced Barrier Lowering (GIBL)
Seongjae CHO Jung Hoon LEE Gil Sung LEE Jong Duk LEE Hyungcheol SHIN Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5  pp. 620-626
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
3-D nonvolatile memoryNAND flash memory arraysaturation currentchannel potential barriergate-induced barrier lowering (GIBL)
 Summary | Full Text:PDF

3-Dimensional Terraced NAND (3D TNAND) Flash Memory-Stacked Version of Folded NAND Array
Yoon KIM Seongjae CHO Gil Sung LEE Il Han PARK Jong Duk LEE Hyungcheol SHIN Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2009/05/01
Vol. E92-C  No. 5  pp. 653-658
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
NANDflash memorystacked NANDvertical channel
 Summary | Full Text:PDF

FN Stress Induced Degradation on Random Telegraph Signal Noise in Deep Submicron NMOSFETs
Hochul LEE Youngchang YOON Ickhyun SONG Hyungcheol SHIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C  No. 5  pp. 776-779
Type of Manuscript:  Special Section LETTER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
random telegraph signal noiseFN stressflash memoryMOSFET
 Summary | Full Text:PDF

Establishing Read Operation Bias Schemes for 3-D Pillar Structure Flash Memory Devices to Overcome Paired Cell Interference (PCI)
Seongjae CHO Il Han PARK Jung Hoon LEE Jang-Gn YUN Doo-Hyun KIM Jong Duk LEE Hyungcheol SHIN Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/05/01
Vol. E91-C  No. 5  pp. 731-735
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
memory arrayelectrical interference3-D memory deviceread operationPCI (paired cell interference)
 Summary | Full Text:PDF

Accurate Extraction of the Trap Depth from RTS Noise Data by Including Poly Depletion Effect and Surface Potential Variation in MOSFETs
Hochul LEE Youngchang YOON Seongjae CHO Hyungcheol SHIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5  pp. 968-972
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Ultra-Thin Gate Insulators
Keyword: 
trap depthRTNtime constantspoly gate depletion effectsurface potential variation
 Summary | Full Text:PDF

Analyses on Current Characteristics of 3-D MOSFET Determined by Junction Doping Profiles for Nonvolatile Memory Devices
Seongjae CHO Jang-Gn YUN Il Han PARK Jung Hoon LEE Jong Pil KIM Jong-Duk LEE Hyungcheol SHIN Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/05/01
Vol. E90-C  No. 5  pp. 988-993
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: Novel MOSFET Structures
Keyword: 
3-D devicesvertical ion implantationdoping profileconcentration peakdoping gradient
 Summary | Full Text:PDF

Characteristics of MOSFET with Non-overlapped Source-Drain to Gate
Hyunjin LEE Sung-il CHANG Jongho LEE Hyungcheol SHIN 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5  pp. 1079-1085
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Sub-0.1 µm CMOS Devices)
Category: 
Keyword: 
non-overlap50 nm MOSFETSCEextended source/drain
 Summary | Full Text:PDF