Hyun Woo KIM


Novel Tunneling Field-Effect Transistor with Sigma-Shape Embedded SiGe Sources and Recessed Channel
Min-Chul SUN Sang Wan KIM Garam KIM Hyun Woo KIM Hyungjin KIM Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5  pp. 639-643
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
TFETcompatibility to CMOS technology flowsigma-shape embedded SiGe sourcerecessed channel
 Summary | Full Text:PDF

L-Shaped Tunneling Field-Effect Transistors for Complementary Logic Applications
Sang Wan KIM Woo Young CHOI Min-Chul SUN Hyun Woo KIM Jong-Ho LEE Hyungcheol SHIN Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5  pp. 634-638
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
L-shaped TFETssubthreshold swingsteep slopecomplementary logic function
 Summary | Full Text:PDF

Study on Threshold Voltage Control of Tunnel Field-Effect Transistors Using VT-Control Doping Region
Hyungjin KIM Min-Chul SUN Hyun Woo KIM Sang Wan KIM Garam KIM Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5  pp. 820-825
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
Tunnel Field-Effect Transistorsthreshold voltageVT-control doping region
 Summary | Full Text:PDF

Comparative Study on Top- and Bottom-Source Vertical-Channel Tunnel Field-Effect Transistors
Min-Chul SUN Hyun Woo KIM Sang Wan KIM Garam KIM Hyungjin KIM Byung-Gook PARK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5  pp. 826-830
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
vertical-channel TFETfield-coupling effectsource configuration
 Summary | Full Text:PDF

Enhancement of the Programming Speed in SANOS Nonvolatile Memory Device Designed Utilizing Al2O3 and SiO2 Stacked Tunneling Layers
Hyun Woo KIM Dong Hun KIM Joo Hyung YOU Tae Whan KIM 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/05/01
Vol. E93-C  No. 5  pp. 651-653
Type of Manuscript:  BRIEF PAPER
Category: Memory Devices
Keyword: 
SANOSSONOScharge transportsilicon nitridestacked tunneling layer
 Summary | Full Text:PDF