Hitoshi YAMAGUCHI


A 200 V CMOS SOI IC with Field-Plate Trench Isolation for EL Displays
Kazunori KAWAMOTO Hitoshi YAMAGUCHI Hiroaki HIMI Seiji FUJINO Isao SHIRAKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/02/01
Vol. E84-C  No. 2  pp. 260-266
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
high voltage CMOSthick SOItrench isolationEL driverLDMOS
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200 V Rating CMOS Transistor Structure with Intrinsic SOI Substrate
Hitoshi YAMAGUCHI Shigeyuki AKITA Hiroaki HIMI Kazunori KAWAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/12/25
Vol. E83-C  No. 12  pp. 1961-1967
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
high breakdown voltageCMOS transistorelectric field relaxationSOIintrinsic layer
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Analysis of Self-Heating in SOI High Voltage MOS Transistor
Hitoshi YAMAGUCHI Hiroaki HIMI Shigeyuki AKITA Toshiyuki MORISHITA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/03/25
Vol. E80-C  No. 3  pp. 423-430
Type of Manuscript:  Special Section PAPER (Special Issue on SOI Devices and Their Process Technologies)
Category: 
Keyword: 
SOIhigh voltageself-heatingtemperature-riseelectrothermal simulation
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Phenomenon and Mechanism of CMOS Latch-up Induced by Substrate Voltage Fluctuation in Thick Film SOI Structure
Hitoshi YAMAGUCHI Hiroaki HIMI Seiji FUJINO Tadashi HATTORI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C  No. 12  pp. 1447-1452
Type of Manuscript:  Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: SOI Devices
Keyword: 
latch-upthick film SOIsubstrate voltage fluctuationcross-talk
 Summary | Full Text:PDF