Hitoshi KUME

A 126 mm2 4-Gb Multilevel AG-AND Flash Memory with Inversion-Layer-Bit-Line Technology
Hideaki KURATA Satoshi NODA Yoshitaka SASAGO Kazuo OTSUGA Tsuyoshi ARIGANE Tetsufumi KAWAMURA Takashi KOBAYASHI Hitoshi KUME Kazuki HOMMA Teruhiko ITO Yoshinori SAKAMOTO Masahiro SHIMIZU Yoshinori IKEDA Osamu TSUCHIYA Kazunori FURUSAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/11/01
Vol. E90-C  No. 11  pp. 2146-2156
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
flash memory, multilevel, inversion-layer-bit-line, AG-AND, 
 Summary | Full Text:PDF(2.3MB)
A New Simple Method for Extracting the Capacitance Coupling Coefficients of Sub-0.5-µm Flash Memory Cells
Keiichi HARAGUCHI Hitoshi KUME Masahiro USHIYAMA Makoto OHKURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/04/25
Vol. E82-C  No. 4  pp. 602-606
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: 
Keyword: 
extracting, capacitance coupling coefficients, sub-0.5-µm flash memory cells, a band-to-band tunneling current, 
 Summary | Full Text:PDF(276.9KB)
Programming and Program-Verification Methods for Low-Voltage Flash Memories Using a Sector Programming Scheme
Katsutaka KIMURA Toshihiro TANAKA Masataka KATO Tetsuo ADACHI Keisuke OGURA Hitoshi KUME 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/07/25
Vol. E78-C  No. 7  pp. 832-837
Type of Manuscript:  Special Section PAPER (Special Issue on LSI Memory Device, Circuit, Architecture and Application Technologies for Multimedia Age)
Category: 
Keyword: 
flash memory, program, erase, Fowler-Nordheim tunneling, sector, 
 Summary | Full Text:PDF(504.8KB)