Hiroyuki NAGASAWA


Cubic GaN/AlGaN HEMTs on 3C-SiC Substrate for Normally-Off Operation
Masayuki ABE Hiroyuki NAGASAWA Stefan POTTHAST Jara FERNANDEZ Jorg SCHORMANN Donat Josef AS Klaus LISCHKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 1057-1063
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword: 
cubic GaNGaN/AlGaN HEMTpiezospontaneouspolarizationblocking voltage
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