Hiroyuki MINAMI


A Q-Band High Gain, Low Noise Variable Gain Amplifier Using Dual Gate AlGaAs/InGaAs Pseudomorphic HEMTs
Takuo KASHIWA Takayuki KATOH Naohito YOSHIDA Hiroyuki MINAMI Toshiaki KITANO Makio KOMARU Noriyuki TANINO Tadashi TAKAGI Osamu ISHIHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/04/25
Vol. E79-C  No. 4  pp. 573-579
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
millimeter-wavelow noise figureMMICdual gategain control
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A Super Low Noise AlInAs/InGaAs HEMT Fabricated by Selective Gate Recess Etching
Naohito YOSHIDA Toshiaki KITANO Yoshitsugu YAMAMOTO Takayuki KATOH Hiroyuki MINAMI Takuo KASHIWA Takuji SONODA Hirozo TAKANO Osamu ISHIHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/09/25
Vol. E78-C  No. 9  pp. 1279-1285
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
HEMTAlInAs/InGaAsInPlow-noiseselectiverecess
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An Ultra Low Noise 50-GHz-Band Amplifier MMIC Using an AIGaAs/InGaAs Pseudomorphic HEMT
Takuo KASHIWA Takayuki KATOH Naohito YOSHIDA Hiroyuki MINAMI Toshiaki KITANO Makio KOMARU Noriyuki TANINO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/03/25
Vol. E78-C  No. 3  pp. 318-321
Type of Manuscript:  LETTER
Category: Electromagnetic Theory
Keyword: 
millimeter-wavelow noise figureMMICAlGaAs/InGaAs Pseudomorphic HEMTmodeling
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A Study on Reliability and Failure Mechanism of T-Shaped Gate HEMTs
Takahide ISHIKAWA Kenji HOSOGI Masafumi KATSUMATA Hiroyuki MINAMI Yasuo MITSUI 
Publication:   IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences
Publication Date: 1994/01/25
Vol. E77-A  No. 1  pp. 158-165
Type of Manuscript:  Special Section PAPER (Special Section on Reliability)
Category: Failure Physics and Failure Analysis
Keyword: 
T-Shaped gate HEMTvon Mises stressrecess depthstress concentration
 Summary | Full Text:PDF