Hiroyuki MATSUNAMI


Hetero-Interface Properties of SiO2/4H-SiC on Various Crystal Orientations
Hiroyuki MATSUNAMI Tsunenobu KIMOTO Hiroshi YANO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 1943-1948
Type of Manuscript:  INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
silicon carbideSiO2/4H-SiC interfaceC-V characteristicsconductance methodchannel mobility
 Summary | Full Text:PDF(528.2KB)

FOREWORD
Hiroyuki MATSUNAMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/09/25
Vol. E75-C  No. 9  pp. 971-971
Type of Manuscript:  FOREWORD
Category: 
Keyword: 
 Summary | Full Text:PDF(68KB)

Deposition of High-Quality Silicon Dioxide by Remote Plasma CVD Technique
Takashi FUYUKI Takeshi FURUKAWA Tohru OKA Hiroyuki MATSUNAMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/09/25
Vol. E75-C  No. 9  pp. 1013-1018
Type of Manuscript:  Special Section PAPER (Special Issue on Silicon Devices and Materials)
Category: 
Keyword: 
remote plasma CVDSiO2
 Summary | Full Text:PDF(496.1KB)

Direct Photo Chemical Vapor Deposition of Silicon Nitride and Its Application to MIS Structre
Masahiro YOSHIMOTO Kenji TAKUBO Takashi SAITO Tetsuya OHTSUKI Michio KOMODA Hiroyuki MATSUNAMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/09/25
Vol. E75-C  No. 9  pp. 1019-1024
Type of Manuscript:  Special Section PAPER (Special Issue on Silicon Devices and Materials)
Category: 
Keyword: 
direct photo-CVDsilicon nitrideMIS structureinterface statesrapid thermal anneal
 Summary | Full Text:PDF(549.8KB)