Hiroyuki MATSUNAMI

Hetero-Interface Properties of SiO2/4H-SiC on Various Crystal Orientations
Hiroyuki MATSUNAMI Tsunenobu KIMOTO Hiroshi YANO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 1943-1948
Type of Manuscript:  INVITED PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
silicon carbide, SiO2/4H-SiC interface, C-V characteristics, conductance method, channel mobility, 
 Summary | Full Text:PDF(528.2KB)
FOREWORD
Hiroyuki MATSUNAMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/09/25
Vol. E75-C  No. 9  pp. 971-971
Type of Manuscript:  FOREWORD
Category: 
Keyword: 
 Summary | Full Text:PDF(68KB)
Deposition of High-Quality Silicon Dioxide by Remote Plasma CVD Technique
Takashi FUYUKI Takeshi FURUKAWA Tohru OKA Hiroyuki MATSUNAMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/09/25
Vol. E75-C  No. 9  pp. 1013-1018
Type of Manuscript:  Special Section PAPER (Special Issue on Silicon Devices and Materials)
Category: 
Keyword: 
remote plasma CVD, SiO2, 
 Summary | Full Text:PDF(496.1KB)
Direct Photo Chemical Vapor Deposition of Silicon Nitride and Its Application to MIS Structre
Masahiro YOSHIMOTO Kenji TAKUBO Takashi SAITO Tetsuya OHTSUKI Michio KOMODA Hiroyuki MATSUNAMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/09/25
Vol. E75-C  No. 9  pp. 1019-1024
Type of Manuscript:  Special Section PAPER (Special Issue on Silicon Devices and Materials)
Category: 
Keyword: 
direct photo-CVD, silicon nitride, MIS structure, interface states, rapid thermal anneal, 
 Summary | Full Text:PDF(549.8KB)