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A Design Technique for a High-Gain, 10-GHz Class-Bandwidth GaAs MESFET Amplifier IC Module
Noboru ISHIHARA Eiichi SANO Yuhki IMAI Hiroyuki KIKUCHI Yasuro YAMANE | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1992/04/25
Vol. E75-C
No. 4
pp. 452-460
Type of Manuscript:
Special Section PAPER (Joint Special Issue on the 1991 VLSI Circuits Symposium)
Category:
Keyword:
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BP-LDD n+ Self-Aligned GaAs-MESFET with Au/WSiN Gate and Its Application to 0.5-30 GHz Distributed Amplifier
Kiyomitsu ONODERA Masami TOKUMITSU Noboru TAKACHIO Hiroyuki KIKUCHI Kazuyoshi ASAI | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1991/12/25
Vol. E74-C
No. 12
pp. 4131-4135
Type of Manuscript:
Special Section PAPER (Special Issue on Millimeter-Wave/Heterojunction Devices)
Category:
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1 GHz Band High Gain Si Monolithic Limiting Amplifiers Using Parallel Feedback Technique
Noboru ISHIHARA Hiroyuki KIKUCHI Mamoru OHARA | Publication: IEICE TRANSACTIONS (1976-1990)
Publication Date: 1987/04/25
Vol. E70-E
No. 4
pp. 383-384
Type of Manuscript:
LETTER
Category: Integrated Circuits
Keyword:
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