Hiroto SEKIGUCHI


Study of Proton Irradiation Effects on p- and n-Type GaN Based-on Two-Terminal Resistance Dependence on 380keV Proton Fluence
Hiroshi OKADA Yuki OKADA Hiroto SEKIGUCHI Akihiro WAKAHARA Shin-ichiro SATO Takeshi OHSHIMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2014/05/01
Vol. E97-C  No. 5  pp. 409-412
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
GaNproton irradiation effectsLED
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