Hirotaka KOMATSUBARA


TCAD Driven Drain Engineering for Hot Carrier Reduction of 3.3 V I/O PMOSFET
Noriyuki MIURA Hirotaka KOMATSUBARA Marie MOCHIZUKI Hirokazu HAYASHI Koichi FUKUDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3  pp. 447-452
Type of Manuscript:  Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
hot carrier degradationI/O transistordrain avalanche hot carrierchannel hot holephoto-mask reduction
 Summary | Full Text:PDF

A New Non-Pair Diffusion Based Dopant Pile-up Model for Process Designers and Its Prediction Accuracy
Hirokazu HAYASHI Noriyuki MIURA Hirotaka KOMATSUBARA Marie MOCHIZUKI Koichi FUKUDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3  pp. 453-458
Type of Manuscript:  Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
RSCEsimple modeldopant pile-upthreshold voltage
 Summary | Full Text:PDF

A Simplified Dopant Pile-Up Model for Process Simulators
Hirokazu HAYASHI Noriyuki MIURA Hirotaka KOMATSUBARA Marie MOCHIZUKI Koichi FUKUDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/12/01
Vol. E85-C  No. 12  pp. 2117-2122
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
RSCEsimple modeldopant pile-upthreshold voltage
 Summary | Full Text:PDF

A Simplified Process Modeling for Reverse Short Channel Effect of Threshold Voltage of MOSFET
Hirokazu HAYASHI Noriyuki MIURA Hirotaka KOMATSUBARA Koichi FUKUDA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/09/01
Vol. E84-C  No. 9  pp. 1234-1239
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
RSCEsimple modeldopant pile-upthreshold voltage
 Summary | Full Text:PDF