Hiroshi ONODA


The Double-Sided Rugged Poly Si (DSR) Technology for High Density DRAMs
Hidetoshi OGIHARA Masaki YOSHIMARU Shunji TAKASE Hiroki KUROGI Hiroyuki TAMURA Akio KITA Hiroshi ONODA Madayoshi INO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/03/25
Vol. E78-C  No. 3  pp. 288-292
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-1/4 Micron Device and Process Technologies)
Category: 
Keyword: 
rugged poly Si256 Mb DRAMsFIN STC (STacked capacitor cell)transformation by ion implantation
 Summary | Full Text:PDF(850.9KB)

Improved Array Architectures of DINOR for 0.5 µm 32 M and 64 Mbit Flash Memories
Hiroshi ONODA Yuichi KUNORI Kojiro YUZURIHA Shin-ichi KOBAYASHI Kiyohiko SAKAKIBARA Makoto OHI Atsushi FUKUMOTO Natsuo AJIKA Masahiro HATANAKA Hirokazu MIYOSHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/08/25
Vol. E77-C  No. 8  pp. 1279-1286
Type of Manuscript:  Special Section PAPER (Special Section on High Speed and High Density Multi Functional LSI Memories)
Category: Non-volatile Memory
Keyword: 
Fowler-Nordheim tunnelingvirtual ground arrayflash memoryNORasymmetrical source/drain structure
 Summary | Full Text:PDF(1MB)

Memory Array Architecture and Decoding Scheme for 3 V Only Sector Erasable DINOR Flash Memory
Shin-ichi KOBAYASHI Hiroaki NAKAI Yuichi KUNORI Takeshi NAKAYAMA Yoshikazu MIYAWAKI Yasushi TERADA Hiroshi ONODA Natsuo AJIKA Masahiro HATANAKA Hirokazu MIYOSHI Tsutomu YOSHIHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/05/25
Vol. E77-C  No. 5  pp. 784-790
Type of Manuscript:  Special Section PAPER (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))
Category: 
Keyword: 
 Summary | Full Text:PDF(634.9KB)