| Hiroshi KAWAGUCHI
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A Self-Alignment Row-by-Row Variable-VDD Scheme Reducing 90% of Active-Leakage Power in SRAM's Fayez Robert SALIBA Hiroshi KAWAGUCHI Takayasu SAKURAI | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2007/04/01
Vol. E90-C
No. 4
pp. 743-748
Type of Manuscript:
Special Section PAPER (Special Section on Low-Power, High-Speed LSIs and Related Technologies) Category: Memory Keyword: active leakage, low power, SRAM, | | Summary | Full Text:PDF | |
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