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| Hiroshi ISHIWARA
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Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors
Min LIAO Hiroshi ISHIWARA Shun-ichiro OHMI | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C
No. 5
pp. 885-890
Type of Manuscript:
Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category:
Keyword:
pentacene, OFETs, high-k, grain size, HfON, | | | Summary | Full Text:PDF | |
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FOREWORD
Hiroshi ISHIWARA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2001/06/01
Vol. E84-C
No. 6
pp. 711-712
Type of Manuscript:
FOREWORD
Category:
Keyword:
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FOREWORD
Hiroshi ISHIWARA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1998/04/25
Vol. E81-C
No. 4
pp. 475-476
Type of Manuscript:
FOREWORD
Category:
Keyword:
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Numerical Analysis of Metal-Ferroelectric-Semiconductor Field-Effect-Transistors (MFS-FETs) Considering Inhomogeneous Ferroelectric Polarization
Tatsuya KAMEI Eisuke TOKUMITSU Hiroshi ISHIWARA | Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 1998/04/25
Vol. E81-C
No. 4
pp. 577-583
Type of Manuscript:
Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)
Category:
Keyword:
ferroelectric, MFSFET, SrBi2Ta2O9, Si non-volatile memory, memory, | | | Summary | Full Text:PDF | |
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