Hiroshi ISHIWARA


Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors
Min LIAO Hiroshi ISHIWARA Shun-ichiro OHMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/05/01
Vol. E95-C  No. 5  pp. 885-890
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
pentaceneOFETshigh-kgrain sizeHfON
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Investigation of n-Type Pentacene Based MOS Diodes with Ultra-Thin Metal Interface Layer
Young-Uk SONG Hiroshi ISHIWARA Shun-ichiro OHMI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2011/05/01
Vol. E94-C  No. 5  pp. 767-770
Type of Manuscript:  Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices)
Category: 
Keyword: 
pentaceneC-Vhysteresispentacene based MOS diodes
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Fabrication and Characterization of 1T2C-Type Ferroelectric Memory Cell
Satoru OGASAWARA Sung-Min YOON Hiroshi ISHIWARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/06/01
Vol. E84-C  No. 6  pp. 771-776
Type of Manuscript:  Special Section PAPER (Special Issue on Nonvolatile Memories)
Category: FeRAMs
Keyword: 
ferroelectric-gate FETretention1T2Cmemory windowthreshold voltage
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A Parallel Element Model for Simulating Switching Response of Ferroelectric Capacitors
Tetsuro TAMURA Yoshihiro ARIMOTO Hiroshi ISHIWARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/06/01
Vol. E84-C  No. 6  pp. 785-790
Type of Manuscript:  Special Section PAPER (Special Issue on Nonvolatile Memories)
Category: FeRAMs
Keyword: 
ferroelectricsimulation modelpolarization switchinghysteresis
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A Model for High Frequency C-V Characteristics of Ferroelectric Capacitors
Nobuhito OGATA Hiroshi ISHIWARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/06/01
Vol. E84-C  No. 6  pp. 777-784
Type of Manuscript:  Special Section PAPER (Special Issue on Nonvolatile Memories)
Category: FeRAMs
Keyword: 
ferroelectricmemorytransistormodelsimulationC-V characteristic
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FOREWORD
Hiroshi ISHIWARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/06/01
Vol. E84-C  No. 6  pp. 711-712
Type of Manuscript:  FOREWORD
Category: 
Keyword: 
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FOREWORD
Hiroshi ISHIWARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/04/25
Vol. E81-C  No. 4  pp. 475-476
Type of Manuscript:  FOREWORD
Category: 
Keyword: 
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Numerical Analysis of Metal-Ferroelectric-Semiconductor Field-Effect-Transistors (MFS-FETs) Considering Inhomogeneous Ferroelectric Polarization
Tatsuya KAMEI Eisuke TOKUMITSU Hiroshi ISHIWARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/04/25
Vol. E81-C  No. 4  pp. 577-583
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)
Category: 
Keyword: 
ferroelectricMFSFETSrBi2Ta2O9Si non-volatile memorymemory
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