Hiromitsu HADA

Writing Circuitry for Toggle MRAM to Screen Intermittent Failure Mode
Takeshi HONDA Noboru SAKIMURA Tadahiko SUGIBAYASHI Naoki KASAI Hiromitsu HADA Shu-ichi TAHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/02/01
Vol. E90-C  No. 2  pp. 531-535
Type of Manuscript:  PAPER
Category: Integrated Electronics
Keyword: 
MRAM, toggle, intermittent failure, 
 Summary | Full Text:PDF(885.8KB)
MRAM Writing Circuitry to Compensate for Thermal Variation of Magnetization Reversal Current
Takeshi HONDA Noboru SAKIMURA Tadahiko SUGIBAYASHI Hideaki NUMATA Sadahiko MIURA Hiromitsu HADA Shuichi TAHARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/04/01
Vol. E86-C  No. 4  pp. 612-617
Type of Manuscript:  Special Section PAPER (Special Issue on High-Performance, Low-Power System LSIs and Related Technologies)
Category: Circuit Design
Keyword: 
MRAM, magnetization reversal current, thermal-variation compensation, 
 Summary | Full Text:PDF(1.2MB)
TiN as a Phosphorus Outdiffusion Barrier Layer for WSix/Doped-Polysilicon Structures
John M. DRYNAN Hiromitsu HADA Takemitsu KUNIO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/04/25
Vol. E76-C  No. 4  pp. 613-625
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)
Category: Process Technology
Keyword: 
barrier, outdiffusion, phosphorus, polysilicon, titanium nitride, tungsten silicide, 
 Summary | Full Text:PDF(1.2MB)