Hiromi SHIMAMOTO


High-Frequency, Low-Noise Si Bipolar Transistor Fabricated Using Self-Aligned Metal/IDP Technology
Hiromi SHIMAMOTO Takahiro ONAI Eiji OHUE Masamichi TANABE Katsuyoshi WASHIO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C  No. 11  pp. 2007-2012
Type of Manuscript:  Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: Low Power-Consumption RF ICs
Keyword: 
silicon bipolar transistornoise figureoptical communicationwireless communication
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DC and AC Performances in Selectively Grown SiGe-Base HBTs
Katsuya ODA Eiji OHUE Masamichi TANABE Hiromi SHIMAMOTO Katsuyoshi WASHIO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C  No. 11  pp. 2013-2020
Type of Manuscript:  Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: Low Power-Consumption RF ICs
Keyword: 
SiGe HBTUHV/CVDselective epitaxial growthGe profilecurrent gaincutoff frequency
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Test Structure and Experimental Analysis of Emitter-Base Reverse Voltage Stress Degradation in Self-Aligned Bipolar Transistors
Hiromi SHIMAMOTO Masamichi TANABE Takahiro ONAI Katsuyoshi WASHIO Tohru NAKAMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/02/25
Vol. E79-C  No. 2  pp. 211-218
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: Reliability Analysis
Keyword: 
self-aligned bipolar transistorhot-carrieremitter-base reverse voltage stress
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Simplified Distribution Base Resistance Model in Self-Aligned Bipolar Transistors
Masamichi TANABE Hiromi SHIMAMOTO Takahiro ONAI Katsuyoshi WASHIO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/02/25
Vol. E79-C  No. 2  pp. 165-171
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: Device and Circuit Characterization
Keyword: 
self-aligned bipolar transistorbase resistanceparasitic base resistancespreading resistance
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High-Speed High-Density Self-Aligned PNP Technology for Low-Power Complementary Bipolar ULSIs
Katsuyoshi WASHIO Hiromi SHIMAMOTO Tohru NAKAMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/04/25
Vol. E78-C  No. 4  pp. 353-359
Type of Manuscript:  Special Section PAPER (Special Issue on Low-Voltage, Low-Power Integrated Circuits)
Category: Device Technology
Keyword: 
high-speed high-density self-aligned pnpcomplementary bipolar ULSIshigh-speed and low-power performancefully compatibility with npn
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