Hirokazu FUJIMAKI


Self-Aligned SiGe HBTs with Doping Level Inversion Using Selective Epitaxy
Shuji ITO Toshiyuki NAKAMURA Hiroshi HOGA Satoshi NISHIKAWA Hirokazu FUJIMAKI Yumiko HIJIKATA Yoshihisa OKITA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Vol. E82-C  No. 3  pp. 526-530
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: Silicon Devices
Keyword: 
bipolar transistorSiGe HBTdoping level inversioncutoff frequencyselective epitaxy
 Summary | Full Text:PDF(901.3KB)

A 40GHz fT SATURN Transistor Using 2-Step Epitaxial Base Technology
Hirokazu FUJIMAKI Koji YAMONO Kenichi SUZUKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/04/25
Vol. E79-C  No. 4  pp. 549-553
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed LSIs)
Category: 
Keyword: 
bipolar LSIepitaxyself alignmentcut-off frequencyoptical communication
 Summary | Full Text:PDF(509.3KB)

High Speed Sub-Half Micron SATURN Transistor Using Epitaxial Base Technology
Hirokazu FUJIMAKI Kenichi SUZUKI Yoshio UMEMURA Koji AKAHANE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/04/25
Vol. E76-C  No. 4  pp. 577-581
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
intergrated electronicsbipolar transistorLSIselective epitaxyself-alignmentSIC
 Summary | Full Text:PDF(762KB)