Hirokazu FUJIMAKI

Self-Aligned SiGe HBTs with Doping Level Inversion Using Selective Epitaxy
Shuji ITO Toshiyuki NAKAMURA Hiroshi HOGA Satoshi NISHIKAWA Hirokazu FUJIMAKI Yumiko HIJIKATA Yoshihisa OKITA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/03/25
Vol. E82-C  No. 3  pp. 526-530
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed IC and LSI Technology)
Category: Silicon Devices
Keyword: 
bipolar transistor, SiGe HBT, doping level inversion, cutoff frequency, selective epitaxy, 
 Summary | Full Text:PDF
A 40GHz fT SATURN Transistor Using 2-Step Epitaxial Base Technology
Hirokazu FUJIMAKI Koji YAMONO Kenichi SUZUKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/04/25
Vol. E79-C  No. 4  pp. 549-553
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra-High-Speed LSIs)
Category: 
Keyword: 
bipolar LSI, epitaxy, self alignment, cut-off frequency, optical communication, 
 Summary | Full Text:PDF
High Speed Sub-Half Micron SATURN Transistor Using Epitaxial Base Technology
Hirokazu FUJIMAKI Kenichi SUZUKI Yoshio UMEMURA Koji AKAHANE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/04/25
Vol. E76-C  No. 4  pp. 577-581
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
intergrated electronics, bipolar transistor, LSI, selective epitaxy, self-alignment, SIC, 
 Summary | Full Text:PDF