Hiroji KAWAI


Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer
Cheng-Yu HU Katsutoshi NAKATANI Hiroji KAWAI Jin-Ping AO Yasuo OHNO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8  pp. 1234-1237
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: GaN-based Devices
Keyword: 
AlGaN/GaN HFETVT-VSUBsubstrate biasp-GaNSIMS
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Electron Transport in GaSb/InAs Hot Electron Transistor Grown by Metalorganic Chemical Vapor Deposition
Kenji FUNATO Kenichi TAIRA Fumihiko NAKAMURA Hiroji KAWAI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/09/25
Vol. E76-C  No. 9  pp. 1384-1391
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Electron Devices)
Category: 
Keyword: 
hot electron transistor (HET)thermionic emissionGaSbInAs
 Summary | Full Text:PDF