Hirohito WATANABE


Trends in Capacitor Dielectrics for DRAMs
Akihiko ISHITANI Pierre-Yves LESAICHERRE Satoshi KAMIYAMA Koichi ANDO Hirohito WATANABE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/11/25
Vol. E76-C  No. 11  pp. 1564-1581
Type of Manuscript:  INVITED PAPER (Special Issue on LSI Memories)
Category: 
Keyword: 
capacitordielectricsSi3N4Ta2O5high permittivity materials256 Mbit1 GbitDRAM
 Summary | Full Text:PDF

A Capacitor over Bit-Line (COB) Stacked Capacitor Cell Using Local Interconnect Layer for 64 MbDRAMs
Naoki KASAI Masato SAKAO Toshiyuki ISHIJIMA Eiji IKAWA Hirohito WATANABE Toshio TAKESHIMA Nobuhiro TANABE Kazuo TERADA Takamaro KIKKAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/04/25
Vol. E76-C  No. 4  pp. 548-555
Type of Manuscript:  Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
DRAMmemory cellstacked capacitorlocal interconnect
 Summary | Full Text:PDF