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Copyright (c) by IEICE
Hideyuki KIKUCHIHARA
Prevention of Highly Power-Efficient Circuits due to Short-Channel Effects in MOSFETs
Arnab MUKHOPADHYAY
Tapas Kumar MAITI
Sandip BHATTACHARYA
Takahiro IIZUKA
Hideyuki KIKUCHIHARA
Mitiko MIURA-MATTAUSCH
Hafizur RAHAMAN
Sadayuki YOSHITOMI
Dondee NAVARRO
Hans Jürgen MATTAUSCH
Publication:
Publication Date:
2019/06/01
Vol.
E102-C
No.
6
pp.
487-494
Type of Manuscript:
PAPER
Category:
Semiconductor Materials and Devices
Keyword:
MOSFET
,
optimization
,
power efficient circuit design
,
CMOS
,
short-channel effect
,
transit delays
,
Summary
|
Full Text:PDF
Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation
Takahiro IIZUKA
Kenji FUKUSHIMA
Akihiro TANAKA
Hideyuki KIKUCHIHARA
Masataka MIYAKE
Hans J. MATTAUSCH
Mitiko MIURA-MATTAUSCH
Publication:
IEICE TRANSACTIONS on Electronics
Publication Date:
2013/05/01
Vol.
E96-C
No.
5
pp.
744-751
Type of Manuscript:
PAPER
Category:
Semiconductor Materials and Devices
Keyword:
high-voltage MOSFET
,
LDMOS
,
HiSIM
,
trench-gate MOSFET compact model
,
Summary
|
Full Text:PDF
Compact Modeling of Expansion Effects in LDMOS
Takahiro IIZUKA
Takashi SAKUDA
Yasunori ORITSUKI
Akihiro TANAKA
Masataka MIYAKE
Hideyuki KIKUCHIHARA
Uwe FELDMANN
Hans Jurgen MATTAUSCH
Mitiko MIURA-MATTAUSCH
Publication:
IEICE TRANSACTIONS on Electronics
Publication Date:
2012/11/01
Vol.
E95-C
No.
11
pp.
1817-1823
Type of Manuscript:
PAPER
Category:
Semiconductor Materials and Devices
Keyword:
high-voltage MOSFETs
,
breakdown
,
high-electric-field phenomena
,
compact model
,
surface potential
,
Summary
|
Full Text:PDF