Hideyuki KIKUCHIHARA

Prevention of Highly Power-Efficient Circuits due to Short-Channel Effects in MOSFETs
Arnab MUKHOPADHYAY Tapas Kumar MAITI Sandip BHATTACHARYA Takahiro IIZUKA Hideyuki KIKUCHIHARA Mitiko MIURA-MATTAUSCH Hafizur RAHAMAN Sadayuki YOSHITOMI Dondee NAVARRO Hans Jürgen MATTAUSCH 
Publication:   
Publication Date: 2019/06/01
Vol. E102-C  No. 6  pp. 487-494
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
MOSFET, optimization, power efficient circuit design, CMOS, short-channel effect, transit delays, 
 Summary | Full Text:PDF
Modeling of Trench-Gate Type HV-MOSFETs for Circuit Simulation
Takahiro IIZUKA Kenji FUKUSHIMA Akihiro TANAKA Hideyuki KIKUCHIHARA Masataka MIYAKE Hans J. MATTAUSCH Mitiko MIURA-MATTAUSCH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2013/05/01
Vol. E96-C  No. 5  pp. 744-751
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
high-voltage MOSFET, LDMOS, HiSIM, trench-gate MOSFET compact model, 
 Summary | Full Text:PDF
Compact Modeling of Expansion Effects in LDMOS
Takahiro IIZUKA Takashi SAKUDA Yasunori ORITSUKI Akihiro TANAKA Masataka MIYAKE Hideyuki KIKUCHIHARA Uwe FELDMANN Hans Jurgen MATTAUSCH Mitiko MIURA-MATTAUSCH 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/11/01
Vol. E95-C  No. 11  pp. 1817-1823
Type of Manuscript:  PAPER
Category: Semiconductor Materials and Devices
Keyword: 
high-voltage MOSFETs, breakdown, high-electric-field phenomena, compact model, surface potential, 
 Summary | Full Text:PDF