Hidetsugu UCHIDA


A Site Specification Method of Gate Oxide Breakdown Spots by a New Test Structure of MOS Capacitors
Satoshi IKEDA Hidetsugu UCHIDA Norio HIRASHITA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2002/05/01
Vol. E85-C  No. 5  pp. 1134-1137
Type of Manuscript:  Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: 
Keyword: 
MOS capacitorgate oxideOBICbreakdown spotXTEM
 Summary | Full Text:PDF(1.7MB)

The Effect of Chemical Cleaning on Bulk Traps in Dry Gate Oxide
Hidetsugu UCHIDA Norio HIRASHITA Tsuneo AJIOKA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/07/25
Vol. E75-C  No. 7  pp. 790-795
Type of Manuscript:  Special Section PAPER (Special Issue on Ultra Clean Technology)
Category: 
Keyword: 
hole trapelectron trapchemical cleaningSiO2avalanche injection
 Summary | Full Text:PDF(446.2KB)