Hidetoshi MATSUMOTO

Thermal Gain Variation Compensation Technique Using Thermistor on HPA Module for W-CDMA System
Akira KURIYAMA Shigehiro YUYAMA Masami OHNISHI Hidetoshi MATSUMOTO Tomonori TANOUE Isao OHBU Fuminori MORISAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/12/01
Vol. E91-C  No. 12  pp. 1933-1940
Type of Manuscript:  PAPER
Category: Microwaves, Millimeter-Waves
Keyword: 
high-power amplifier module, thermistor, thermal gain variation, linearity, W-CDMA, 
 Summary | Full Text:PDF
0.15 µm Gate i-AlGaAs/n-GaAs HIGFET with a 13.3 S/Vcm K-Value
Hidetoshi MATSUMOTO Yasunari UMEMOTO Yoshihisa OHISHI Mitsuharu TAKAHAMA Kenji HIRUMA Hiroto ODA Masaru MIYAZAKI Yoshinori IMAMURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/09/25
Vol. E76-C  No. 9  pp. 1373-1378
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Electron Devices)
Category: 
Keyword: 
GaAs hetero-FET, HIGFET, short-channel effect, source resistance, K-value, 
 Summary | Full Text:PDF